Process window analysis using dual layer overlap area between metal via pair

In this work, we leverage the functionalities of Large FOV SEM, a high-speed ebeam tool for both defect inspection and CD/EPE metrology application, to demonstrate an end-to-end flow and deliver a process window analysis using CD and overlap area between layers as key metrics. The main focus is to establish the overlap area metric as a reliable indicator of yield and therefore allow for characterization of FR (fail rate) and process margins (dose/focus/OVL) early in the flow.

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Publication Details

Published
2025-02-21
DOI
https://doi.org/10.1117/12.3051916
Citations
1
Primary Topic
Advancements in Photolithography Techniques
Type
article
Field-Weighted Citation Impact
0.73
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article

Process window analysis using dual layer overlap area between metal via pair

Abdalmohsen Elmalk, Bruce Wang, Yun Lin, Miao Wang et al.
1 citations
Advancements in Photolithography Techniques
0.73
article

Process window analysis using dual layer overlap area between metal via pair

Abdalmohsen Elmalk, Bruce Wang, Yun Lin, Miao Wang, Jill Freeman
article en
1 citations

Abstract

In this work, we leverage the functionalities of Large FOV SEM, a high-speed ebeam tool for both defect inspection and CD/EPE metrology application, to demonstrate an end-to-end flow and deliver a process window analysis using CD and overlap area between layers as key metrics. The main focus is to establish the overlap area metric as a reliable indicator of yield and therefore allow for characterization of FR (fail rate) and process margins (dose/focus/OVL) early in the flow.

ASML (United States) (US)
Openalex Percentile: Top 31%
Advancements in Photolithography Techniques
0.73
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