Process window analysis using dual layer overlap area between metal via pair
In this work, we leverage the functionalities of Large FOV SEM, a high-speed ebeam tool for both defect inspection and CD/EPE metrology application, to demonstrate an end-to-end flow and deliver a process window analysis using CD and overlap area between layers as key metrics. The main focus is to establish the overlap area metric as a reliable indicator of yield and therefore allow for characterization of FR (fail rate) and process margins (dose/focus/OVL) early in the flow.
Authors
- Abdalmohsen Elmalk
- Bruce Wang (ORCID: https://orcid.org/0000-0003-3486-5494)
- Yun Lin (ORCID: https://orcid.org/0000-0003-1285-9122)
- Miao Wang (ORCID: https://orcid.org/0000-0002-2661-3011)
- Jill Freeman
Institutions
- ASML (United States) (US)
Publication Details
- Published
- 2025-02-21
- DOI
- https://doi.org/10.1117/12.3051916
- Citations
- 1
- Primary Topic
- Advancements in Photolithography Techniques
- Type
- article
- Field-Weighted Citation Impact
- 0.73