A study of CD-SAXS within-spot uniformity with mass CDSEM and 3D tomography
In this work, we have evaluated high aspect ratio contact (HARC) mask hole structure of 3D NAND device with critical dimension-small angle x-ray scattering (CD-SAXS) for hole-to-hole variations. The top-down CD scanning electron microscope (CDSEM) and 3D tomography (3DT) technologies are used as references to verify within-spot uniformity. It is simulated how hole-to-hole variations of individual hole CD, tilt, depth, and pitch in xy plane affect CD-SAXS raw images/signals. The correlation between measured CD-SAXS Q<sub>r</sub> and Q<sub>z</sub> signals and hole-to-hole variations in profile parameters extracted from CDSEM and 3DT within 300μm spot of CD-SAXS has been found as a result
Authors
- Hyungjin Lee (ORCID: https://orcid.org/0009-0001-1872-0853)
- Tiffany Teoh
- D. Pirkle
- Tae‐Yeon Seong (ORCID: https://orcid.org/0000-0003-0761-3363)
- Sean Ningen
- Matt Davis (ORCID: https://orcid.org/0000-0002-5949-3044)
- Dongjin Choi (ORCID: https://orcid.org/0000-0001-5968-955X)
- Jin Zhang (ORCID: https://orcid.org/0000-0002-6691-5612)
- Sangwon Seo (ORCID: https://orcid.org/0000-0003-2281-9167)
- Yuseong Jang (ORCID: https://orcid.org/0000-0002-9057-482X)
- Tian Lan (ORCID: https://orcid.org/0000-0003-3549-2255)
- Juan Song
- Chulgi Song
- Sujung Lee (ORCID: https://orcid.org/0000-0001-6151-2497)
Institutions
- Lam Research (Austria) (AT)
- Lam Research (United States) (US)
Publication Details
- Published
- 2025-02-21
- DOI
- https://doi.org/10.1117/12.3048889
- Primary Topic
- Advancements in Photolithography Techniques
- Type
- article
- Field-Weighted Citation Impact
- 0.00