AFM metrology for 3D high aspect ratio semiconductor structures

Transistors have long been the foundation of the semiconductor industry, with continuous architectural innovations enabling the scaling of integrated circuits while maintaining high performance. Advancements in deposition and lithographic techniques have further expanded design possibilities, while increasing structural complexity demands stricter process control. Atomic force microscopy (AFM) offers a rapid and reliable metrology solution, providing high-resolution measurements and robust statistical analysis of critical parameters. In this work, we present clearly resolved individual profiles of lines and spaces in high aspect ratio (HAR) gate all around FET (GAAFET)-type structures on both the nanosheet (NS) region and in the isolation region between the nanosheets and we present a comprehensive statistical evaluation of their critical dimensions.