The fabrication of nano-scale fin LEDs using nanoimprinting lithography

In this study, we fabricated nano-scale inorganic LEDs using nanoimprint lithography (NIL), a cost-effective and high-throughput technique. Patterns for 4.0 × 0.7μm² fin-LEDs were formed using NIL on a 4-inch blue gallium nitride (GaN) wafer with InGaN/GaN multi-quantum wells (MQWs) grown by epitaxy. Through a top-down process, including dry and wet etching, approximately 267 million Fin-LEDs with a height of 1.1μm were fabricated. Scanning electron microscope (SEM) observations at nine points on the wafer revealed that the NIL-created Fin-LEDs pattern had a length variation coefficient of approximately 2.08%. In contrast, the height variation before separation was around 3.6%. The uniformly fabricated fin-LEDs were assembled into electroluminescent (EL) devices using dielectrophoresis (DEP) technology. These results demonstrate Fin-LEDs' potential as a competitive, high-performance nano-scale inorganic LED display technology.