Fundamental understanding of the development process for metal oxide photoresists

Understanding the impact of developer chemistry on Metal Oxide Photoresist (MOR) is important for process development and enablement of device fabrication at leading nodes. In this work, molecular simulations leveraged to evaluate combined reaction and mass transport processes relevant for film development. Collectively, developer adsorption and reaction thermodynamics are compared for select process scenarios to obtain a fundamental mechanistic understanding of MOR chemistry.

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Publication Details

Published
2025-02-21
DOI
https://doi.org/10.1117/12.3047803
Primary Topic
Semiconductor materials and devices
Type
article
Field-Weighted Citation Impact
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article

Fundamental understanding of the development process for metal oxide photoresists

Michael Carcasi, Tetsunari Furusho, Arnaud Dauendorffer, Cong Que Dinh et al.
Semiconductor materials and devices
article

Fundamental understanding of the development process for metal oxide photoresists

Michael Carcasi, Tetsunari Furusho, Arnaud Dauendorffer, Cong Que Dinh, Yuichi Terashita, Ihsan Simms, Hikari Tomori, Kayoko Cho, Lior Huli, Satoru Shimura, Naoki Shibata, Ankur Agarwal
article en

Abstract

Understanding the impact of developer chemistry on Metal Oxide Photoresist (MOR) is important for process development and enablement of device fabrication at leading nodes. In this work, molecular simulations leveraged to evaluate combined reaction and mass transport processes relevant for film development. Collectively, developer adsorption and reaction thermodynamics are compared for select process scenarios to obtain a fundamental mechanistic understanding of MOR chemistry.

Tokyo Electron (Japan) (JP), In-Q-Tel (US)
Openalex Percentile: Top 98%
Semiconductor materials and devices
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