Digital lithography technology for the formation of high aspect ratio vias with side wall optimization for dry etch processes on advanced substrates

In this study, we present the capability of Digital Lithography Technology TM (DLT) system from Applied Materials to print high resolution vias of Critical Dimension (CD) ≤5µm on Dry Film Resist (DFR), with aspect ratio greater than 3:1. DLT system’s high placement accuracy and sidewall control allows for the use of these printed vias as a hard mask, which consequently enables the transfer of such pattern to dielectric films. This methodology is particularly crucial for enhancing the performance of Re-Distribution Layers (RDL) in advance packaging