Printability test results of a positive tone organometallic resist by EUV and EB lithography

Metal oxide resists with organometal moieties have showed high EUV absorption, etching resistance and high resolution as negative tone resist in line and space and pillar patterning. On the other hand, high performance positive-tone resists are necessary for contact hole patterning from now on. We reported an organometal positive-tone EUV chemically amplified resist concept based on polarity change and chain scission to make positive-tone contrast with organic solvents as developer. In this presentation, feasibility test of contact hole patterning was demonstrated by 150 kV EB drawer. To achieve the patterning of contact holes with CD sizes of less than 25 nm, developer was optimized in terms of dissolution contrast by QCM method. As the second part, we demonstrated to introduce Photosensitization (PS) process into our positive-tone resist platform for high-sensitive patterning. UV flood exposure after EB irradiation improved sensitivity by 29% in patterning of 35 nm C/H.