NTD CARs purity developments toward single-print capability in EUV scanners

Extreme Ultraviolet (EUV) patterning technology has been pivotal in the production of advanced logic devices, evolving from 7 nm nodes since 2018 to the current 3 nm node. As device scaling progresses, the associated complexity and cost of multi-patterning processes have driven the semiconductor industry to prioritize EUV technology development, particularly focusing on new resist materials to address stochastic issues. The adoption of single-print capability with high Numerical Aperture (NA) EUV scanners presents a significant challenge for semiconductor fabs. EUV Chemically Amplified Resists (CARs) are particularly prone to scum defects caused by incomplete resist clearance during development, often attributed to polymer aggregation. This paper investigates optimized filtration membranes for enhancing defect detectability in EUV Negative-Tone Development (NTD) CARs. A comparative study evaluates filters with different membrane surface functionalities and substrates, analyzing their impact on patterning performance through resist application, wafer exposure, and post-etch defect analysis. Our findings demonstrate the efficacy of optimized filter designs in reducing defect densities, providing actionable insights for refining EUV lithography processes to achieve higher yields and enhanced performance in semiconductor manufacturing.