XPS and p‐ARXPS Analysis of Nanometric‐Thick Polyphosphazene Film on Undoped n‐InP 10 <sup>15</sup> /cm <sup>3</sup>
ABSTRACT In this study, we investigate the formation and characterization of an ultrathin polyphosphazene (PPP) film on undoped n‐type indium phosphide semiconductor (InP) through electrochemical passivation in liquid ammonia (NH₃). The passivation process, driven by photogenerated holes, results in a protective PPP layer on the InP surface. Using a combination of X‐ray photoelectron spectroscopy (XPS) and parallel angle‐resolved XPS (p‐ARXPS), we analyze and discuss the chemical composition and atomic arrangement of the passivating film. The XPS results confirm the presence of phosphorus and nitrogen species forming the PPP layer, while the p‐ARXPS data provide a detailed relative depth profile, revealing an ordered atomic structure perpendicular to the surface. This study reveals at least three different chemical environments of nitrogen depending on the molecular arrangement in PPP.
Authors
- Arnaud Etchéberry (ORCID: https://orcid.org/0000-0003-3515-9866)
- Anne‐Marie Gonçalves (ORCID: https://orcid.org/0000-0003-2837-8710)
- Gianluca Visagli
- Mathieu Frégraux
Institutions
- Centre National de la Recherche Scientifique (FR)
- Université de Versailles Saint-Quentin-en-Yvelines (FR)
- Université Paris-Saclay (FR)
- Institut Lavoisier de Versailles (FR)
Publication Details
- Journal
- Surface and Interface Analysis
- Published
- 2025-02-20
- DOI
- https://doi.org/10.1002/sia.7389
- Citations
- 1
- Primary Topic
- Nanowire Synthesis and Applications
- Type
- article
- Field-Weighted Citation Impact
- 0.67
Funders
- Agence Nationale de la Recherche