The study of synaptic plasticity in the ZnO memristor elements for neuromorphic AI
The paper presents the results of experimental studies of synaptic plasticity in a memristive memory element based on nanocrystalline ZnO films grown by pulsed laser deposition. The obtained results can be used in the development of technological bases for the formation of high-performance multi-level artificial synapses for elements of neuroelectronics and hardware neural networks.
Authors
- Daniel Rodrı́guez (ORCID: https://orcid.org/0000-0002-4699-0957)
- V. A. Smirnov (ORCID: https://orcid.org/0000-0001-7130-2194)
- Zakhar Vakulov (ORCID: https://orcid.org/0000-0003-3084-4522)
- R V Tominov (ORCID: https://orcid.org/0000-0002-1263-2158)
- I. S. Ugryumov
Institutions
- Nanomaterials Research (United States) (US)
Publication Details
- Journal
- Journal of Advanced Dielectrics
- Published
- 2025-02-21
- DOI
- https://doi.org/10.1142/s2010135x2540003x
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Russian Science Foundation