ZnGa₂O₄ THIN FILM TRANSISTORS AND PHOTOTRANSISTORS BY RF SPUTTERING METHOD

In this study, ZnGa 2 O 4 thin-film transistors (TFTs) with various channel layer thicknesses were fabricated using radio frequency (RF) magnetron sputtering. The thickness of 30[Formula: see text]nm exhibited the best performance and outstanding gate-control ability with an on/off current ratio of [Formula: see text], threshold voltage ([Formula: see text]) of 3.28[Formula: see text]V, and subthreshold swing (SS) of 0.31[Formula: see text]V/decade. ZnGa 2 O 4 , as a wide-bandgap highly transparent semiconducting material, is a potential candidate for optoelectronic applications. Therefore, we extended the applicability of ZnGa 2 O 4 TFT with 30[Formula: see text]nm channel layer thickness to phototransistors. The phototransistor had a maximum responsivity of 0.0025[Formula: see text]A/W and a UV-to-visible rejection ratio of [Formula: see text] at a bias voltage ([Formula: see text]) of [Formula: see text] [Formula: see text]V.