SEMICONDUCTIVE PROPERTIES OF In₂O₃ ADDED SIC THIN FILMS

SiC is a crucial material for third-generation semiconductors due to its ultra-wide bandgap. However, its high melting point and hardness make direct deposition challenging, and doping with impurities to create n-type semiconductor thin films is even more difficult. This study focused on doping SiC powder with In 2 O 3 to achieve an In concentration of 6.5 at% and create n-type thin films. The In-doped SiC powder was heated to 500 ∘ C to create a target, which was then used with electron beam (e-beam) technology to deposit thin films of In-doped SiC with a thickness of approximately 202[Formula: see text]nm. Key advancements included using various tools to analyze the physical and electrical properties of these thin films. Hall effect measurements assessed mobility, resistivity, and carrier concentration, confirming their n-type semiconductor nature. The Tauc plot method was used to determine the bandgap values of both pure and In-doped SiC thin films. Additionally, a semiconductor parameter analyzer measured the conductivity and I-V characteristics of the devices. X-ray photoelectron spectroscopy and Gaussian-resolved spectra further confirmed a strong correlation between conductivity and the concentration of oxygen vacancies.