New Insights into the Intrinsic Transport Properties of Sb ₂ O ₅ and ZnSb ₂ O ₆

Transparent conducting oxides are indispensable in a wide range of technological applications. However, materials that effectively combine high transparency with excellent carrier conductivity remain limited, with the field primarily relying on a few well‐established systems, such as indium tin oxide (ITO) and aluminum‐doped zinc oxide (AZO). Recently, Sb(V) oxides have emerged as a promising alternative class of materials, with the potential to compete with these state‐of‐the‐art oxides. Herein, Sb 2 O 5 and ZnSb 2 O 6 are examined using an advanced carrier transport approach based on the exact solution of the Boltzmann transport equation for the electron–phonon scattering. This approach not only reinforces the potential of Sb(V) oxides but also provides deeper insights into the electron–phonon scattering mechanisms in these materials.