Near‐Perfect Standard Ternary Inverter Based on MoTe₂ Homojunction Anti‐Ambipolar Transistor

Abstract Ternary inverters offer a promising solution to enhance information processing density and efficiency while reducing system complexity, addressing energy density limitations in complementary metal‐oxide‐semiconductor technology in the post‐Moore era. Among these, the standard ternary inverter (STI) is particularly appealing due to its symmetry and reliability in ternary logic operations, though its fabrication remains challenging. Here, a controllable and process‐compatible doping technique is reported that combines rapid thermal annealing with h‐BN‐assisted ultraviolet photoinduced doping to achieve area‐selective p‐type and n‐type doping on a single MoTe 2 flake. This approach enables the fabrication of high‐performance anti‐ambipolar transistors (AATs) and unipolar p‐type field‐effect transistors (FETs) based on MoTe 2 homojunctions. By achieving near‐perfect conductance matching between connected AATs and p‐type FETs, an STI with a highly uniform staircase transfer characteristic and an intermediate state width of precisely one‐third of the input voltage range is demonstrated. The AATs also exhibit a peak‐to‐valley ratio exceeding 10 3 , rapid transconductance reversal, and tunable peak positions, enabling the development of high‐performance frequency doublers without additional voltage bias. This study presents a novel doping strategy for efficient STI and multifunctional device fabrication, advancing the development of next‐generation electronic technologies.