Self‐Rectifying Volatile Memristor for Highly Dynamic Functions

Abstract In this study, a highly rectifying memristor composed of a Pt/TaO x /TiN stack, incorporating a complementary metal‐oxide semiconductor‐friendly metal oxide switching layer, is fabricated to assess its performance in a diverse range of applications. The memristor exhibits highly rectifying characteristics due to the Schottky barrier formed by the work function difference between the Pt and TiN electrodes. For a compliance current of 1 mA, the memristor displays volatile memory properties, attributed to the migration of oxygen ions within the TaO x layer. Leveraging this volatile behavior, synaptic functions—where changes in synaptic plasticity occur in response to incoming spikes—are emulated. Additionally, the complete functions of a biological nociceptor are demonstrated, including threshold, relaxation, no‐adaptation, sensitization, and recovery. These highly dynamic functions of the memristor are then utilized to mimic neuronal firing with a synaptic array, Morse code implementation enabling data generation, and computing functions through cost‐effective reservoir computing. The simplicity of the fabrication process and the broad range of functions implemented in a single memristor make the Pt/TaO x /TiN device a promising candidate for future applications.