Curvature-Induced Electrical Properties of Two-Dimensional Electrons on Carbon Nanotube Springs

This study investigates the mechanisms driving current generation, power output, and charge storage in carbon nanotube springs under mechanical strain, addressing the gap between experimental observations and theoretical modeling, particularly in asymmetric electrical responses. Leveraging the Dirac equation in curved spacetime, we analyze how curvature-induced scalar and pseudo-gauge potentials shape two-dimensional electron gases confined to carbon nanotube springs. We incorporate applied mechanical strain by introducing time-dependent variations in the Lamé coefficient and curvature parameters, enabling the analysis of mechanical deformation’s influence on electrical properties. Our model clarifies asymmetric electrical responses during stretching and compression cycles and explains how strain-dependent power outputs arise from the interplay between mechanical deformation and curvature effects. Additionally, we demonstrate mechanisms by which strain influences charge redistribution within the helically coiled structure. We develop a new equivalent circuit model linking mechanical deformation directly to electronic behavior, bridging theoretical physics with practical electromechanical applications. The analysis reveals asymmetric time-dependent currents, enhanced power output during stretching, and strain-dependent charge redistribution. Fourier analysis uncovers dominant frequency components (primary at Ω, harmonic at 2Ω) explaining these asymmetries. Theoretical investigations explain the mechanisms behind the curvature-driven time-dependent current source, the frequency-dependent peak power, the characteristics of open-circuit voltage with strain, and the asymmetric electrical property response under applied strain as the generated current and the charge distribution within the carbon nanotube springs. These findings highlight carbon nanotube springs applied to energy harvesting, wearable electronics, and sensing technologies.