Impact of distributed Bragg reflectors on the intrinsic detection efficiency of superconducting nanowire single-photon detectors

In this study, we investigate the impact of substrates with distributed Bragg reflectors (DBRs) on the proximity effect during the fabrication of superconducting nanowire single-photon detectors (SNSPDs) using electron beam lithography. We compare the linewidth compression and line edge roughness of nanowires prepared on three different DBRs substrates. Additionally, we characterize the variations in switching current (I s w ) and intrinsic detection efficiency (IDE) at a 2.2-K temperature. The results show that when the substrates are composed of low atomic number materials, such as Si and SiO 2 , the proximity effect is significantly mitigated. As a consequence, the lithography quality of nanowires is effectively improved, thus enhancing the IDE of SNSPDs. This study is expected to provide new insights into the fabrication of SNSPDs and lay the foundation for the preparation of high-performance and high-uniformity large-area devices.

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Publication Details

Journal
Superconductivity
Published
2025-02-20
DOI
https://doi.org/10.1016/j.supcon.2025.100152
Citations
3
Primary Topic
Nanowire Synthesis and Applications
Type
article
Field-Weighted Citation Impact
2.02

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Impact of distributed Bragg reflectors on the intrinsic detection efficiency of superconducting nanowire single-photon detectors

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Impact of distributed Bragg reflectors on the intrinsic detection efficiency of superconducting nanowire single-photon detectors

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article en
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Abstract

In this study, we investigate the impact of substrates with distributed Bragg reflectors (DBRs) on the proximity effect during the fabrication of superconducting nanowire single-photon detectors (SNSPDs) using electron beam lithography. We compare the linewidth compression and line edge roughness of nanowires prepared on three different DBRs substrates. Additionally, we characterize the variations in switching current (I s w ) and intrinsic detection efficiency (IDE) at a 2.2-K temperature. The results show that when the substrates are composed of low atomic number materials, such as Si and SiO 2 , the proximity effect is significantly mitigated. As a consequence, the lithography quality of nanowires is effectively improved, thus enhancing the IDE of SNSPDs. This study is expected to provide new insights into the fabrication of SNSPDs and lay the foundation for the preparation of high-performance and high-uniformity large-area devices.

SuperconductivityVol. 13
Chinese Academy of Sciences (CN), Shanghai Institute of Microsystem and Information Technology (CN), University of Chinese Academy of Sciences (CN)
National Natural Science Foundation of China
Affordable and clean energy
Openalex Percentile: Top 15%
Nanowire Synthesis and Applications
2.02
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