Broadband GaN HEMT Power Amplifier with High Efficiency and Linear for 5G Application

A novel broadband 100watt GaN HEMT amplifier for the enhancement of peak and back-off power efficiency is proposed. Proposed Power Amplifier enhance significant efficiency at 6dB back-off and peak output power on the entire frequency band from $2.2 \mathrm{GHz}-2.7 \mathrm{GHz}.100$ watt GaN HEMT Power Amplifier results validated through design, implementation, testing, tuning and measurements on entire frequency band. The measurements results showed that output saturated power is 49.7 dBm to 50.5 dBm with gain 10 dB to 11 dB and 6 dB back-off power is 44 dbm to 44.5 dbm with gain 14.2 dB to 15 dB over the entire frequency band. The Achieved Peak drain efficiency is become $\mathbf{6 9 \%} \mathbf{- 7 7 \%}$ and $\mathbf{6 d B}$ back-off power efficiency is 51%-55% over the entire frequency band.