Ultra-Wideband High Harmonic Suppression LNA

A ten octave low-noise amplifier (LNA) based on 0.15-um GaAs pHEMT process with high harmonic suppression ratio is proposed. The LNA can cover 0.7 - 7 GHz frequency band, achieving a typical gain of 14 dB while the gain fluctuation is less than 0.6 dB, the input and output return loss is less than -11 dB, the typical noise figure in band is 3 dB, the output power at 1 dB compression point is greater than 18 dBm. Attributed to good amplitude and phase balance of the input and output balun and differential amplifier, the second harmonic suppression ratio is greater than 40 dBc, greatly superior to traditional broadband LNAs. The chip occupies an area of 1.6 × 1.6 mm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>, and consumes 170 mA from a +5V supply. This high harmonic suppression LNA can be widely used in Sub-6G and other wideband radio frequency systems.