A 76-81GHz LNA with 19dB gaint in 22nm CMOS FD-SOI

This paper presents a $76-81 \mathrm{GHz}$ low-noise amplifier in 22nm COMS FD-SOI for Automotive Radar application. This LNA uses a cascode structure and source degeneration inductor technique to improve gain and reduce the noise figure. This two-stage cascode LNA achieving a gain of $\mathbf{1 9. 0 7 - 1 8} \mathrm{dB}$ in the 76-81 GHz and a noise figure below 5.9 dB. The IP 1 dB is -21.7 dBm, and the stability factor $\mathrm{Kf}\gt1$ within the $\mathbf{1 - 2 0 0} \mathbf{~ G H z}$ frequency range. The chip area is only 0.13 mm 2 including pads.