A 24-27 GHz wideband LNA in 40 nm RF CMOS Technology
In this paper, a single-ended wideband low noise amplifier (LNA) in the K-band is presented. By utilizing a two-stage common-source (CS-CS cascode) current reuse topology, the LNA circuit achieves low power consumption and low return loss. By adding another transistor as a third stage to amplify the signal, the LNA can further increase the gain while maintaining linearity. Implemented using a standard 40 nm RF CMOS process, the proposed LNA demonstrates more than $\mathbf{1 2} \mathbf{d B}$ gain and less than 5.1 dB noise figure across the 24 GHz to 27 GHz band, with input and output return loss below - 15 dB.
Authors
- Zhaoyu Zhang
- Yinggang Li (ORCID: https://orcid.org/0000-0003-2132-8411)
- George T. T. Sheng
- Linghao Chu
- Congwei Liao
Institutions
- Shenzhen Technology University (CN)
Publication Details
- Published
- 2024-09-22
- DOI
- https://doi.org/10.1109/apcap62011.2024.10881233
- Primary Topic
- Radio Frequency Integrated Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.00