A W-Band MSIE-based High Isolation, High P1dB SPDT Switch

This paper proposes a magnetically switchable isolationenhanced (MSIE) based SPDT switch, which is composed of controlled magnetic coupling transformer. The MSIE-based SPDT switch possess a strong-coupled transformer with two novel impedance transformation networks. The strong-coupled transformer provides a low-loss path while the impedance transformation networks select the signal transmit to ground or antenna, so that high isolation and low insertion loss are achieved with intrinsic high power handing capacity which is suit for millimeter-wave/terahertz applications. Compared to traditional bulky quarter-wavelength transmission line structure, the proposed MSIEbased SPDT switch occupies a $0.03 \mathrm{~mm}^{2}$ core chip area. Meanwhile, the proposed switch achieves an insertion loss of 2-2.5 dB, an isolation more than 47 dB and a return loss better than 10 dB from 70-105 GHz. The simulated input referred 1 dB compression point ($\mathrm{IP}_{1 \mathrm{~dB}}$) is $\mathbf{3 2. 3} \mathbf{~ d B m}$ at 94 GHz.

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Publication Details

Published
2024-09-22
DOI
https://doi.org/10.1109/apcap62011.2024.10881086
Primary Topic
Semiconductor Quantum Structures and Devices
Type
article
Field-Weighted Citation Impact
0.00

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article

A W-Band MSIE-based High Isolation, High P1dB SPDT Switch

Zhuang Miao, Fanyi Meng
Semiconductor Quantum Structures and Devices
article

A W-Band MSIE-based High Isolation, High P1dB SPDT Switch

Zhuang Miao, Fanyi Meng
article en

Abstract

This paper proposes a magnetically switchable isolationenhanced (MSIE) based SPDT switch, which is composed of controlled magnetic coupling transformer. The MSIE-based SPDT switch possess a strong-coupled transformer with two novel impedance transformation networks. The strong-coupled transformer provides a low-loss path while the impedance transformation networks select the signal transmit to ground or antenna, so that high isolation and low insertion loss are achieved with intrinsic high power handing capacity which is suit for millimeter-wave/terahertz applications. Compared to traditional bulky quarter-wavelength transmission line structure, the proposed MSIEbased SPDT switch occupies a $0.03 \mathrm{~mm}^{2}$ core chip area. Meanwhile, the proposed switch achieves an insertion loss of 2-2.5 dB, an isolation more than 47 dB and a return loss better than 10 dB from 70-105 GHz. The simulated input referred 1 dB compression point ($\mathrm{IP}_{1 \mathrm{~dB}}$) is $\mathbf{3 2. 3} \mathbf{~ d B m}$ at 94 GHz.

Tianjin University (CN)
National Natural Science Foundation of China, Research and Development
Affordable and clean energy
Openalex Percentile: Top 76%
Semiconductor Quantum Structures and Devices
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A W-Band MSIE-based High Isolation, High P1dB SPDT Switch — Zhuang Miao, Fanyi Meng · (2024) | TGRS Research Map | TGRS