Design and Measurement of A 282 GHz CMOS Switch for Terahertz Reconfigurable Metasurface

This paper presents a transistor switch based on the 65 nm CMOS process, capable of operating in the terahertz frequency band. By incorporating a parallel inductive loop, the detrimental effects of parasitic capacitance and other factors are mitigated, resulting in an optimized isolation of 9.8 dB and an insertion loss of 1.7 dB at 282 GHz. Additionally, a test system based on TRL calibration has been developed, enabling direct measurement on the device plane to obtain its intrinsic S parameters. This switch is useful for THz reconfigurable metasurface and antenna designs.