High Efficiency and Broadband GaN Power Amplifier for n79 Sub-6 GHz 5G Applications

This work presents a broadband 20-watt GaN HEMT amplifier that aims to enhance efficiency in the n79 frequency band. The proposed power amplifier significantly improves efficiency and achieves peak output power across the entire frequency range from 4.4 GHz to 5.2 GHz. The results of a 20 watt GaN HEMT power amplifier has been validated through the comprehensive process of designing, implementing, testing, tuning, and measuring across the entire frequency range. The measurements indicate that the output saturated power ranges from 42.6 dBm to 43.4 dBm, with a gain of 9 dB to 11 dB across targeted bandwidth. The maximum measured drain efficiency achieved varies from $\mathbf{6 2 \%}$ to $\mathbf{7 5} \%$.