UWB high isolation GaAs SPDT switch for millimeter-wave applications

Based on 0.25 um GaAs process, this paper designs a GaAs millimeter-wave reflective SPDT switch based on multi-stage series-parallel structure, covering L, S, $\mathbf{C}, \mathbf{X}, \mathrm{Ku}, \mathrm{K}$ band. In the ultra-wideband range of DC-20 GHZ, the SPDT switch not only has a good isolation between the two output ports, but also maintains a low insertion loss. The design and measurement results show that the SPDT switch proposed in this paper has an insertion loss of not more than 1.5dB in the DC-20 GHZ range, and an isolation of not less than 35dB in the whole band. In addition, it has a good input and output standing wave when the switch is turned on. The final chip area is $1.24 \mathrm{~mm} \times 1.11 \mathrm{~mm}$, with high integration and high application value.