A Novel Design of Dual-Band Energy Selective Surfaces Using Characteristic Modes Analysis

A novel dual-band energy selective surfaces (ESS) is proposed with the aid of the theory of characteristic mode in this paper. The structure of the ESS is composed of a trimmed Jerusalem cross patch, printed on FR-4 substrate. The PIN diodes loaded on the surface are determined according to the characteristic current, and the nonlinear transmission of the incident wave is adaptively controlled by the PIN diodes. The full-wave simulation results show that when the PIN diodes are turned on, the ESS can maintain the transmission coefficient below $\mathbf{- 1 0} \mathbf{~ d B}$ within the frequency band of 4.2 $\mathrm{GHz} \sim 5.0 \mathrm{GHz}$ and $10.4 \mathrm{GHz} \sim 11.7 \mathrm{GHz}$, with a minimum of -23.6 dB. While the insertion loss at the resonant point is less than -1 dB, as the PIN diodes are turned off. Finally, it is verified that the designed ESS can realize the adaptive shielding of dual-band incident waves by field-circuit co-simulation.

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Publication Details

Published
2024-09-22
DOI
https://doi.org/10.1109/apcap62011.2024.10881290
Primary Topic
Advanced Antenna and Metasurface Technologies
Type
article
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article

A Novel Design of Dual-Band Energy Selective Surfaces Using Characteristic Modes Analysis

Yifan Hu, Dazhi Ding, Mengmeng Li, Lingyu Chen et al.
Advanced Antenna and Metasurface Technologies
article

A Novel Design of Dual-Band Energy Selective Surfaces Using Characteristic Modes Analysis

Yifan Hu, Dazhi Ding, Mengmeng Li, Lingyu Chen, Zihao Ning
article en

Abstract

A novel dual-band energy selective surfaces (ESS) is proposed with the aid of the theory of characteristic mode in this paper. The structure of the ESS is composed of a trimmed Jerusalem cross patch, printed on FR-4 substrate. The PIN diodes loaded on the surface are determined according to the characteristic current, and the nonlinear transmission of the incident wave is adaptively controlled by the PIN diodes. The full-wave simulation results show that when the PIN diodes are turned on, the ESS can maintain the transmission coefficient below $\mathbf{- 1 0} \mathbf{~ d B}$ within the frequency band of 4.2 $\mathrm{GHz} \sim 5.0 \mathrm{GHz}$ and $10.4 \mathrm{GHz} \sim 11.7 \mathrm{GHz}$, with a minimum of -23.6 dB. While the insertion loss at the resonant point is less than -1 dB, as the PIN diodes are turned off. Finally, it is verified that the designed ESS can realize the adaptive shielding of dual-band incident waves by field-circuit co-simulation.

Nanjing University of Science and Technology (CN)
Affordable and clean energy
Openalex Percentile: Top 54%
Advanced Antenna and Metasurface Technologies
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