A 144 GHz Power Amplifier with 7.4 Psat in a Smaller Area

This paper presents a terahertz power amplifier for 144 GHz application, which uses 65 nm CMOS process, a differential common source structure with neutralization capacitors, a transformer combined with input matching as a whole is utilized for the single-ended conversion of the signal to differential, and a two-stage interstage matching is also used for the interstage matching with a transformer, and a transmission line matching is used for the improvement of the area utilization rate in the follow-up. The simulation results show that the gain of the power amplifier is 23.6 dB, the saturation output power is 7.4 dBm, $P_{1 {\mathrm {d B}}}$ is 2 dBm, the power consumption is 85 mW, the bandwidth is $136 \mathrm{GHz}-152 \mathrm{GHz}$, the input return loss is 14.3 dB, and the output return loss is -13.4 dB, which is better than -10 dB in the frequency band. achieves high gain and high saturation output power.