Development of Self‐Aligned Top‐Gate Transistor Arrays on Wafer‐Scale Two‐Dimensional Semiconductor
Two-dimensional semiconductor materials (2DSM) effectively mitigate the short-channel effect due to their atomic thickness, offering significant advantages over traditional silicon-based materials, particularly in short channel length. In manufacturing 2DSM top-gate field-effect transistors (TG-FETs), simultaneous miniaturization of the gate and channel can only be achieved through a self-alignment process, enabling high-density integration of short-channel FETs. However, current self-aligned FETs based on 2DSM face challenges in attaining wafer-scale integration due to manufacturing process limitations. This work has successfully developed high-performance and wafer-scale TG-FET arrays using a self-aligned method that integrates the processes of dry etching, wet selective etching, and post-device optimization. The miniaturization is demonstrated by fabricating TG-FETs with a channel length of 200 nm, achieving an impressive on-state current density of 465.5 µA µm<sup>-1</sup> and a high on-off current ratio of 10<sup>8</sup>. Furthermore, we constructed the inverters and logic modules based on self-aligned FETs, showcasing the process's compatibility for future integration.
Authors
- Chunxiao Cong (ORCID: https://orcid.org/0000-0001-9786-825X)
- Sen Wang (ORCID: https://orcid.org/0009-0003-4968-9566)
- Sheng Dai (ORCID: https://orcid.org/0000-0001-5787-0179)
- Xiaofei Yue
- Jinshu Zhang
- Haibing Qiu (ORCID: https://orcid.org/0000-0001-9980-1446)
- Xinliu He
- Zhejia Zhang (ORCID: https://orcid.org/0009-0008-1153-0652)
- Yu‐Fei Song (ORCID: https://orcid.org/0000-0003-1309-0626)
- Zihan Xu (ORCID: https://orcid.org/0000-0002-2248-3379)
- Haojie Chen (ORCID: https://orcid.org/0000-0002-1186-2197)
- Xiangqi Dong
- Xiaojun Tan (ORCID: https://orcid.org/0009-0001-1343-6466)
- Wenzhong Bao (ORCID: https://orcid.org/0000-0002-3871-467X)
- Lihui Zhou (ORCID: https://orcid.org/0000-0002-0259-8523)
- Hui Xie (ORCID: https://orcid.org/0009-0005-7444-184X)
- Saifei Gou
- Mingrui Ao
- Xia Yin
- Yin Wang (ORCID: https://orcid.org/0000-0001-5500-1228)
- Yuchen Tian (ORCID: https://orcid.org/0009-0002-4952-721X)
- Yuxuan Zhu (ORCID: https://orcid.org/0000-0003-1831-9688)
- Yan Hu (ORCID: https://orcid.org/0000-0002-3005-3643)
- Jing Wan (ORCID: https://orcid.org/0000-0002-6339-4006)
- Qicheng Sun (ORCID: https://orcid.org/0000-0001-5119-4501)
- Jieya Shang
- Jiahao Wang (ORCID: https://orcid.org/0009-0008-6878-3597)
Institutions
- North University of China (CN)
- East China University of Science and Technology (CN)
- Fudan University (CN)
- Shanghai Fudan Microelectronics (China) (CN)
Publication Details
- Journal
- Advanced Science
- Published
- 2025-02-20
- DOI
- https://doi.org/10.1002/advs.202415250
- Citations
- 2
- Primary Topic
- 2D Materials and Applications
- Type
- article
- Field-Weighted Citation Impact
- 1.04
Funders
- National Natural Science Foundation of China
- Fudan University
- Shanghai Municipal Education Commission
- Science and Technology Commission of Shanghai Municipality
- National Key Research and Development Program of China