Modeling and efficiency enhancement of InGaP/GaAs dual-hetero junction solar cells using AlGaAs and AlGaInP emitters

Abstract This study focuses on optimizing the performance of InGaP/GaAs dual-hetero junction solar cells (DHJSCs) through advanced material selection and structural modifications using the Silvaco–Atlas simulator. The baseline model, validated against theoretical and experimental benchmarks, served as a foundation for significant efficiency improvements. Key innovations include replacing conventional GaAs and InGaP emitters with AlGaAs and AlGaInP, respectively, which enhanced carrier collection and reduced recombination losses due to their superior material properties such as a larger bandwidth. Optimizations of thickness, doping concentration, and back surface field properties further minimized performance losses. These refinements resulted in an efficiency increase from 32.83% to 41.60%, with an additional rise to 42.68% at a reduced operating temperature of 15 °C. This work emphasizes the potential for achieving higher efficiencies and lower manufacturing costs by leveraging structural simulation to streamline solar cell design and development. The findings set a benchmark for future research and practical implementations in the field of high-efficiency photovoltaic technologies.