MICROELECTRONIC SWITCH BASED ON SEMICONDUCTOR (In2Te3)0.97(MnTe2)0.03

It has been found that the switching effect occurs in the In2Te3 semiconductor compound and solid solution crystals based on it. With this in mind, a thin-film microelectronic switch was created based on the (In2Te3)0.97(MnTe2)0.03 solid solution crystal, and its important characteristics were studied. It has been established that the switching mechanism in this semiconductor material has an electronic-thermal character and varies with temperature.

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Publication Details

Journal
Advanced Physical Research
Published
2025-02-20
DOI
https://doi.org/10.62476/apr.71118
Primary Topic
Optical Systems and Laser Technology
Type
article
Field-Weighted Citation Impact
0.00
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article

MICROELECTRONIC SWITCH BASED ON SEMICONDUCTOR (In2Te3)0.97(MnTe2)0.03

M.Sh. Hasanova
Advanced Physical Research
Optical Systems and Laser Technology
article

MICROELECTRONIC SWITCH BASED ON SEMICONDUCTOR (In2Te3)0.97(MnTe2)0.03

M.Sh. Hasanova
article en

Abstract

It has been found that the switching effect occurs in the In2Te3 semiconductor compound and solid solution crystals based on it. With this in mind, a thin-film microelectronic switch was created based on the (In2Te3)0.97(MnTe2)0.03 solid solution crystal, and its important characteristics were studied. It has been established that the switching mechanism in this semiconductor material has an electronic-thermal character and varies with temperature.

Advanced Physical Research
Openalex Percentile: Top 98%
Optical Systems and Laser Technology
DOIOpen Access PDFOpenAlex
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MICROELECTRONIC SWITCH BASED ON SEMICONDUCTOR (In2Te3)0.97(MnTe2)0.03 — M.Sh. Hasanova · Advanced Physical Research (2025) | TGRS Research Map | TGRS