Ultrafast ferroelectric field-effect transistors with low operating voltage based on van der Waals heterostructures

Abstract Ferroelectric field-effect transistors, characterized by low operating voltages and ultra-high speeds, are an important non-volatile memory device concept in modern microelectronics. Here, we show ferroelectric field-effect transistors using CuInP 2 S 6 as the ferroelectric layer and MoS 2 as the semiconductor channel layer. Thanks to optimized material thicknesses and clean, trap-free interfaces, we have achieved high-performance ferroelectric field-effect transistors with operating voltage as low as 1.5 V and an ultrafast speed of 20 ns. Our devices have a large on/off ratio of about 10 6 and a large memory window of about 1.7 V. Our results suggest that ferroelectric field-effect transistors are promising candidates for next-generation non-volatile memory applications.