Anisotropic and Temperature-Independent Magnetic Susceptibility Peak in MoSe<sub>1.8</sub>Te<sub>0.2</sub> van der Waals Layers
Temperature-independent susceptibility peaks were identified under an out-of-plane magnetic field in layered MoSe1.8Te0.2. Raman spectroscopy was employed to analyze the vibrational modes associated with the 1T and 2H phases. The oxidation states of Mo, Se, and Te were determined using X-ray photoelectron spectroscopy, confirming the presence of both phases. A hysteresis loop, along with a magnetic moment splitting between zero-field-cooled and field-cooled states, was observed under an out-of-plane magnetic field. In contrast, no susceptibility peaks or signatures of ferromagnetism were detected when an in-plane magnetic field was applied. The observed susceptibility peaks in our samples were correlated with ferromagnetic behavior. High-resolution transmission electron microscopy and scanning tunneling microscopy revealed that the susceptibility peak originates from ferromagnetism induced by lattice misalignment.
Authors
- Fu-En Cheng
- Ankush Saxena (ORCID: https://orcid.org/0000-0001-9613-6014)
- Mitch M. C. Chou (ORCID: https://orcid.org/0000-0003-0113-7191)
- Shiu‐Ming Huang (ORCID: https://orcid.org/0000-0002-0085-1353)
- Kuan‐Ting Liu (ORCID: https://orcid.org/0000-0002-1355-5019)
- Pin-Cing Wang (ORCID: https://orcid.org/0000-0001-5162-7370)
Institutions
- National Sun Yat-sen University (TW)
- Crystal Research (United States) (US)
- National Cheng Kung University (TW)
Publication Details
- Journal
- ACS Applied Electronic Materials
- Published
- 2025-02-20
- DOI
- https://doi.org/10.1021/acsaelm.5c00012
- Citations
- 2
- Primary Topic
- 2D Materials and Applications
- Type
- article
- Field-Weighted Citation Impact
- 1.04
Funders
- Hsinchu Science Park Bureau, Ministry of Science and Technology, Taiwan