Physical and Technological Causes of Channel Inhomogeneity in InSb Single Crystals Heavily Doped with Te

InSb single crystals doped with tellurium are grown by the modernized Czochralski method in the [100], [111], and [112] crystallographic directions. The development of channel inhomogeneity due to the low activation energy of Te atoms captured by planes with high reticular density {111} in the process of crystal growth is studied. Based on the Hall method, it is shown that the electrophysical parameters, i.e., the of free charge carrier numbers (FCCNs) and their mobility, in and outside the channel region differ from each other by 10 and 22%, respectively. It is shown that in addition to the crystallographic direction of growth, the development of channel inhomogeneity is greatly influenced by the selection of technological conditions (rotation speed of the seed, crucible with melt, its burial, etc.), as well as the design of the thermal unit of the growth furnace. It is revealed that to obtain InSb(111) wafers, which are in demand in the microelectronics market, the optimal technological solution is the development of the single crystal growth mode, which allows us to ensure the early exit of the channel inhomogeneity to the periphery. It is shown that by adding additional screens to the thermal unit of the growth furnace, thereby lowering the axial gradient at the crystallization front, it is possible to achieve the channel exit to the single crystal diameter 4 cm earlier than the reverse cone.