Correction to “Hydrogenation Strategy for Al₂O₃/MoO_<i>x</i> Passivating Contact in High‐Efficiency Crystalline Silicon Solar Cells”

In paragraph 3 of the "Results and Discussion" section, the text "The Q f value for H*-Al 2 O 3 films was -4.74 10 12 cm -2 , higher than the values for H-Al 2 O 3 (-4.63 10 12 cm -2 ), Al 2 O 3 (-4.5 10 12 cm -2 ), and H*-Al 2 O 3 (O 3 ) (-4.41 10 12 cm -2 )." was incorrect.This should have read: "The Q f value for H*-Al 2 O 3 films was -2.45 10 10 cm -2 , higher than the values for H-Al 2 O 3 (-1.64 10 10 cm -2 ), Al 2 O 3 (-1.08 10 10 cm -2 ), and H*-Al 2 O 3 (O 3 ) (-9.6 10 9 cm -2 )."In Note S1 of "Supporting Information", the text "From formula 1, we can obtain the Q f of Al 2 O 3 which equals to -4.5 10 12 cm -2 based on the V fb = 1.21 V and the oxide capacitance C ox = 7.47 10 -12 F. The Q f of H-Al 2 O 3 film calculated from the V fb = 1.32 V and the oxide capacitance C ox = 7.3 10 -12 F is -4.63 10 12 cm -2 .The Q f of H*-Al 2 O 3 film calculated from the V fb = 1.18 V and the oxide capacitance C ox = 7.98 10 -12 F is -4.74 10 12 cm -2 .And the Q f of H*-Al 2 O 3 (O 3 ) film calculated from the V fb = 1.31V and the oxide capacitance C ox = 6.98 10 -12 F is -4.41 10 12 cm -2 " was incorrect.This should have read: "From formula 1, we can obtain the Q f of Al 2 O 3 which equals to -1.08 10 10 cm -2 based on the V fb = -0.6V and the oxide capacitance C ox = 2.58 10 -11 F. The Q f of H-Al 2 O 3 film calculated from the V fb = -0.63V and the oxide capacitance C ox = 2.89 10 -11 F is -1.64 10 10 cm -2 .The Q f of H*-Al 2 O 3 film calculated from the V fb = 0.63 V and the oxide capacitance C ox = 3 10 -11 F is -2.45 10 10 cm -2 .And the Q f of H*-Al 2 O 3 (O 3 ) film calculated from the V fb = -0.57V and the oxide capacitance C ox = 2.81 10 -11 F is -9.6 10 9 cm -2 ."The authors also admitted to an image compilation error in Figure 2b and were able to provide the original image.The erroneous C-V curves on the p-Si MOS structure in our manuscript were due to an incorrect polarity connection, which also caused an erroneous extraction of the flat-band voltage.The authors confirm that all the experimental results and corresponding conclusions mentioned in the paper remain unaffected.The corrected Figure 2b is shown as follows.