Random Number Generators and Spiking Neurons from Metal Oxide/Small Molecules Heterojunction <i>N</i>‐Shape Switching Transistors (Adv. Funct. Mater. 8/2025)
Field-Effect Transistors In article number 2411348, Amit R. Trivedi, Hocheon Yoo, and co-workers propose a hybrid FET using n-type ZTO and p-type DNTT for random number generation and spiking neurons. Trap sites causing instability are used for random number generation while an interlayer improves device performance by reducing hysteresis. These improvements enhance negative transconductance characteristics, where a spiking neuron is then demonstrated to mimic neuronal behavior.
Authors
- Wonjun Shin (ORCID: https://orcid.org/0000-0001-9122-2458)
- Byung Chul Jang (ORCID: https://orcid.org/0000-0002-2254-7918)
- Amit Ranjan Trivedi (ORCID: https://orcid.org/0000-0001-5436-7922)
- Yeongkwon Kim
- Juhyung Seo (ORCID: https://orcid.org/0000-0003-4396-9439)
- Seungme Kang
- Divake Kumar (ORCID: https://orcid.org/0009-0008-2165-2258)
- Hocheon Yoo (ORCID: https://orcid.org/0000-0003-0772-3327)
- Jinill Cho
- Taesung Kim
Institutions
- Gachon University (KR)
- Seoul National University (KR)
- Kyungpook National University (KR)
- University of Illinois Chicago (US)
- Sungkyunkwan University (KR)
Publication Details
- Journal
- Advanced Functional Materials
- Published
- 2025-02-01
- DOI
- https://doi.org/10.1002/adfm.202570043
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 0.00