Design and Optimization of 600V IGBT

This paper presents the design of Trench Insulated Gate Bipolar Transistors (IGBT) based on 600V platform. Firstly, the principle of carrier storage (CS) layer is introduced, and TCAD tool is used for simulation to investigate the effects of factors such as trench gate width, trench gate depth, and the CS layer implantation dose on the performance parameters of the IGBT device. Then, the IGBT chip was tape-out and packaged, and the test results show that the IGBT designed in this paper can reduce the forward voltage drop by 16% and the turn-off loss by 28%, which improves the performance compared with the traditional IGBT.