Superconducting transition and topological behavior in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>π</mml:mi></mml:math>-SnS under high pressure
The interplay between superconductivity and topological properties has garnered significant research interest due to its potential implications for novel quantum materials. Here, we systematically investigate the structural, topological, and electronic transport properties of \ensuremath{\pi}-SnS nanocrystals under high pressure. A pressure-induced superconducting transition is observed at 30.4 GPa, characterized by a dome-shaped behavior with a maximum superconducting transition temperature $({T}_{\mathrm{c}})$ of 3.7 K, which persists up to 91 GPa. Synchrotron x-ray diffraction reveals two structural phase transitions: from $P{2}_{1}3\text{\ensuremath{-}}\mathrm{I}$ to $P{2}_{1}3\text{\ensuremath{-}}\mathrm{II}$ at 9.3 GPa, and subsequently to $Pm\overline{3}m$ at 44.8 GPa. Furthermore, theoretical calculations indicate that both novel high-pressure phases of SnS exhibit topological properties coexisting with superconductivity. The theoretical results reveal an evolution from trivial semiconductors to weak topological and ultimately to strong topological materials. Our findings suggest that \ensuremath{\pi}-SnS provides an excellent platform for exploring the interplay between superconductivity and the topological characteristics of electronic systems.
Authors
- Yanping Huang
- Xindeng Lv (ORCID: https://orcid.org/0009-0006-5594-8554)
- Tian Cui (ORCID: https://orcid.org/0000-0002-9664-848X)
- Fei Chen
- Feng Liu
- Qian Li (ORCID: https://orcid.org/0000-0001-8270-2425)
- Min Wu (ORCID: https://orcid.org/0009-0003-2079-9542)
Institutions
- Ningbo University (CN)
- Shaoxing University (CN)
- Jilin University (CN)
- Liaocheng University (CN)
- Kwansei Gakuin University (JP)
- Jilin Medical University (CN)
Publication Details
- Journal
- Physical review. B./Physical review. B
- Published
- 2025-02-18
- DOI
- https://doi.org/10.1103/physrevb.111.054518
- Primary Topic
- Chalcogenide Semiconductor Thin Films
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China
- Natural Science Foundation of Ningbo Municipality
- National Key Research and Development Program of China