Stabilizing entanglement of boron-vacancy defects in a hexagonal boron-nitride membrane by two-phonon driving

Generating stable entanglement by mimicking a squeezed environment plays an important role in quantum metrology and quantum information. Here, we propose an efficient scheme for generating stable entanglement of two boron-vacancy (VB) defects in a suspended circular hexagonal boron nitride ($h$-BN) membrane via a two-phonon drive. Compared to other reported methods, our scheme only needs a linear resource and thus is more convenient for experimental implementation. In the presence of a gradient magnetic field, the electronic spin degree of freedom of the VB defect can be coupled to the mechanical mode of $h$-BN membrane through spin-phonon interaction. The coupling strength is closely related to the geometry of the magnetic field and the parameters of the membrane, which allows us to realize different coupling regimes by choosing the parameter appropriately. After applying a time-dependent pump to the $h$-BN membrane, we can modulate its spring constant and obtain a tunable two-phonon drive to the mechanical mode. We then investigate the dissipative coupling between two VB spins in the condition of a large dissipation limit, showing that the stable entanglement can be generated under a two-phonon drive. In addition, we also take the spin dephasing into consideration to explore the robustness of our scheme. We then extend this scheme to multiparticle systems, which shows that the entanglement degree deepens with the increase of VB spin number. This work offers a fascinating platform for generating stable entanglement with VB spins in two-dimensional $h$-BN.