Reliable All PMOS Voltage Doublers for Low-Voltage Applications
Limitations of traditional charge pump architectures are investigated, particularly in the context of low voltage operation and reliability challenges. To address these challenges, two all PMOS charge pumps are proposed, one with a four-phase clocking scheme and another with a six-phase clocking scheme. The proposed structures offer enhanced protection against voltage overstress and higher efficiency at low supply voltages. Both traditional and proposed pumps are designed in 14nm process using same sized pumping capacitors, equal clock frequency and output loading to fairly evaluate the efficiency and longevity of the different designs. Results demonstrate that the proposed designs can provide high pumping efficiency at low voltage processes without overstress.
Authors
- Vardan Sahakyan (ORCID: https://orcid.org/0000-0002-7552-4904)
- Hovhannes Gomtsyan
- Hrayr Sahakyan
- Garnik VOSKANYAN
- A. O. Melikyan (ORCID: https://orcid.org/0000-0002-3825-2356)
- Sergo Harutyunyan
- Razmik Soghomonyan
Institutions
- National Polytechnic University of Armenia (AM)
- Yerevan State University (AM)
- Institute of Radiophysics and Electronics (AM)
- European University of Armenia
- National Academy of Sciences of Armenia (AM)
Publication Details
- Published
- 2024-11-13
- DOI
- https://doi.org/10.1109/ewdts63723.2024.10873617
- Primary Topic
- Advancements in Semiconductor Devices and Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.00