Sense Amplifier Design Considering Reliability Issues
The method of design of sense amplifier that takes into account reliability issues is presented, where the lifetime of transistors has become longer. Aging simulation results with self-heating (SHE) are improved with the help of circuit architectural changes. At the end-of-life (EOL) the offset degradation has been reduced up to 4%. Also, the heating of the transistors has been decreased due to power reduction. Various industry standards, including Double Data Rate (DDR), Universal Chiplet Interconnect (UCI), Universal Serial Bus (USB), and Peripheral Component Interconnect (PCI), can use the provided structure in specialized input and output circuits.
Authors
- Tigran Grigoryan (ORCID: https://orcid.org/0000-0002-9915-2412)
- Shavarsh Melikyan (ORCID: https://orcid.org/0009-0002-2331-0637)
- Kang Li (ORCID: https://orcid.org/0000-0002-4045-3456)
- G. G. Grigoryan (ORCID: https://orcid.org/0000-0001-6234-7972)
- G. S. Harutyunyan
- Xuefeng Zheng
Institutions
- Xidian University (CN)
- National Polytechnic University of Armenia (AM)
- Yerevan State University (AM)
- University of Bristol (GB)
Publication Details
- Published
- 2024-11-13
- DOI
- https://doi.org/10.1109/ewdts63723.2024.10873730
- Primary Topic
- Sensor Technology and Measurement Systems
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Key Research and Development Program of China