Ionizing Radiation-Induced Data Imprinting Effects in SRAM Arrays
The impact of total ionizing dose (TID) on commercial static random access memory (SRAM) reveals data imprinting effects on the power-up state, starting at doses as low as 50 krad(Si). SRAM chips from smaller technology nodes appear to be less vulnerable to these imprinting effects. In addition, we observed that the imprinting effects gradually diminish with annealing over time.
Authors
- Umeshwarnath Surendranathan (ORCID: https://orcid.org/0000-0003-4743-9320)
- Ujjwal Guin (ORCID: https://orcid.org/0000-0002-4819-8728)
- Aleksandar Milenković (ORCID: https://orcid.org/0000-0002-9359-4594)
- Biswajit Ray (ORCID: https://orcid.org/0000-0002-5890-1368)
- Abishek S. Vellankanni
Institutions
- University of Alabama in Huntsville (US)
- Auburn University (US)
- Colorado State University (US)
Publication Details
- Journal
- IEEE Transactions on Nuclear Science
- Published
- 2025-02-18
- DOI
- https://doi.org/10.1109/tns.2025.3543233
- Citations
- 1
- Primary Topic
- Integrated Circuits and Semiconductor Failure Analysis
- Type
- article
- Field-Weighted Citation Impact
- 0.73
Funders
- National Science Foundation
- Idaho Operations Office, U.S. Department of Energy