Reliability Study of Through Ceramic Via Substrate Under Temperature Conditions

With the development of electronic technology, through ceramic via (TCV) has gradually become key technology in the manufacture of electronic products. In this experiment, different TCV-Cu samples were prepared using different current densities. The samples were heated to 350 °C and the helium leakage rate of the samples were compared before and after heating. In order to investigate the reason for the change of the helium leakage rate, the microstructure of the Cu/Al<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> interface was observed by SEM. Finally, the mechanical simulation of TCV was carried out to verify the relationship between stress and interface crake. It was found that cracks appeared at the Cu/Al<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> interface after heating, leading to the helium leakage rate decrease of the sample. Cracks were produced by stress mismatch between Cu and Al<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> ceramic. Mechanical analysis of the samples structure revealed that the stress at the interface can be reduced by increase the radius and thickness of the electroplated Cu soldering pad.