Graded Waveguide Design for Improved Performance of AlGaN Based Deep Ultraviolet-C 221 nm Laser Diode
The characteristics of deep ultraviolet laser diodes (DUV LDs) emitting at a peak wavelength of 221 nm have been examined through numerical simulations. Researchers globally are developing AlGaN-based DUV LDs as alternatives to mercury lamps for various applications, including water and air purification, curing polymer, nonline of sight communication and Lidar remote detection. The study explores the output power verses injection current, stimulated recombination rate, internal quantum efficiency and spectral gain of the linear graded p-waveguide layer, revealing significant enhancements. The optimized structure effectively reduces electron overflow and increases hole injection, demonstrating enhanced performance compared to the conventional device.
Authors
- Muhammad Usman (ORCID: https://orcid.org/0000-0003-3728-082X)
- Shazma Ali (ORCID: https://orcid.org/0000-0001-7960-9158)
- Usman Habib (ORCID: https://orcid.org/0000-0002-9115-9716)
- Anum
- Iqra Anjum
- Wagma Hidayat
- Syeda Wageeha Shakir
Institutions
- Ghulam Ishaq Khan Institute of Engineering Sciences and Technology (PK)
Publication Details
- Published
- 2024-08-20
- DOI
- https://doi.org/10.1109/ibcast61650.2024.10877118
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00