Analysis of RC Delay Circuit of Passive Negative GaN Driver

In high-frequency switching power electronics applications, wide-bandwidth semiconductors have gained popularity, with GaN devices being widely used in applications such as power chargers. However, with increasing switching frequency, bridge-leg crosstalk in GaN drive circuits becomes increasingly significant. In this paper, a passive adjustable negative voltage drive circuit for complementary PWM signals is proposed. In this circuit, the turn-on time of the Miller clamp circuit is regulated by an RC delay circuit to minimize turn-off losses. The design and analysis of the RC delay circuit are based on Kirchhoff's law, and the effectiveness of the proposed circuit is confirmed by sim ulation and experiment.

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Publication Details

Published
2024-11-22
DOI
https://doi.org/10.1109/ifeea64237.2024.10878572
Primary Topic
GaN-based semiconductor devices and materials
Type
article
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article

Analysis of RC Delay Circuit of Passive Negative GaN Driver

Tianfu Sun, Chi Zhang, Jianing Liang, Yue Wu
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GaN-based semiconductor devices and materials
article

Analysis of RC Delay Circuit of Passive Negative GaN Driver

Tianfu Sun, Chi Zhang, Jianing Liang, Yue Wu
article en

Abstract

In high-frequency switching power electronics applications, wide-bandwidth semiconductors have gained popularity, with GaN devices being widely used in applications such as power chargers. However, with increasing switching frequency, bridge-leg crosstalk in GaN drive circuits becomes increasingly significant. In this paper, a passive adjustable negative voltage drive circuit for complementary PWM signals is proposed. In this circuit, the turn-on time of the Miller clamp circuit is regulated by an RC delay circuit to minimize turn-off losses. The design and analysis of the RC delay circuit are based on Kirchhoff's law, and the effectiveness of the proposed circuit is confirmed by sim ulation and experiment.

Chinese Academy of Sciences (CN), Southern University of Science and Technology (CN), Chinese University of Hong Kong, Shenzhen (CN), University of Chinese Academy of Sciences (CN)
Openalex Percentile: Top 84%
GaN-based semiconductor devices and materials
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Analysis of RC Delay Circuit of Passive Negative GaN Driver — Tianfu Sun, Chi Zhang, et al. · (2024) | TGRS Research Map | TGRS