K-Band LiNbO <b>₃</b> A3 Lamb-Wave Resonators With Through-Holes
Addressing critical challenges in Lamb wave resonators, this paper presents the first validation of resonators incorporating through-holes. Using the A3 mode resonator based on a LiNbO3 single-crystal thin film and operating in the K band as a prominent example, we demonstrate the advantages of the through-hole design. In the absence of additional processing steps, and while maintaining device performance—including operating frequency, electromechanical coupling coefficient, and quality factor—without introducing extra spurious modes, this approach effectively reduces the ineffective suspension area of the piezoelectric LiNbO3 film, potentially enhancing mechanical and thermal stability. It also standardizes etching distances (and times) across various Lamb wave resonators on a single wafer, facilitating the development of Lamb wave filters. The versatility of the through-hole technique, with relaxed constraints on hole geometry and arrangement, further highlights its significance. Together with the other advantages, these features underscore the transformative potential of through-holes in advancing the practical implementation of Lamb wave resonators and filters. [2024-0155]
Authors
- Shu-Mao Wu
- Si‐Yuan Yu (ORCID: https://orcid.org/0000-0001-5247-1240)
- Hao Yan (ORCID: https://orcid.org/0000-0003-1545-1659)
- Zhen-Hui Qin
- Chen-Bei Hao
- Yan-Feng Chen
Institutions
- Collaborative Innovation Center of Advanced Microstructures (CN)
- Nanjing University (CN)
Publication Details
- Journal
- Journal of Microelectromechanical Systems
- Published
- 2025-02-18
- DOI
- https://doi.org/10.1109/jmems.2025.3540960
- Citations
- 2
- Primary Topic
- Acoustic Wave Resonator Technologies
- Type
- article
- Field-Weighted Citation Impact
- 1.35
Funders
- National Natural Science Foundation of China
- National Key Research and Development Program of China