Cryogenic CMOS Active Mixer Employing Transformer-Based Current-Bleeding Technique

This brief presents a cryogenic complementary metal-oxide-semiconductor (CMOS) active mixer designed to achieve low-noise and low-power characteristics at cryogenic temperatures. The proposed design employs a transformer-based current-bleeding (CB) technique that further enhances both the conversion gain and noise performance of the mixer when compared to the conventional CB approaches. Implemented as a double-balanced active mixer, the design was fabricated using a 65-nm CMOS process and validated across the 4–8 GHz frequency range under both cryogenic and room temperatures.

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Publication Details

Journal
IEEE Transactions on Circuits & Systems II Express Briefs
Published
2025-02-18
DOI
https://doi.org/10.1109/tcsii.2025.3543306
Citations
1
Primary Topic
Advancements in Semiconductor Devices and Circuit Design
Type
article
Field-Weighted Citation Impact
0.73

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article

Cryogenic CMOS Active Mixer Employing Transformer-Based Current-Bleeding Technique

Junhyeop Kim, Juhui Jeong, Junghwan Han
1 citations
IEEE Transactions on Circuits & Systems II Express Briefs
Advancements in Semiconductor Devices and Circuit Design
0.73
article

Cryogenic CMOS Active Mixer Employing Transformer-Based Current-Bleeding Technique

Junhyeop Kim, Juhui Jeong, Junghwan Han
article en
1 citations

Abstract

This brief presents a cryogenic complementary metal-oxide-semiconductor (CMOS) active mixer designed to achieve low-noise and low-power characteristics at cryogenic temperatures. The proposed design employs a transformer-based current-bleeding (CB) technique that further enhances both the conversion gain and noise performance of the mixer when compared to the conventional CB approaches. Implemented as a double-balanced active mixer, the design was fabricated using a 65-nm CMOS process and validated across the 4–8 GHz frequency range under both cryogenic and room temperatures.

IEEE Transactions on Circuits & Systems II Express BriefsVol. 72(4)
Chungnam National University (KR)
Ministry of Trade, Industry and Energy, National Research Foundation of Korea
Openalex Percentile: Top 31%
Advancements in Semiconductor Devices and Circuit Design
0.73
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