Quantification of Oxygen Vacancies in SrFe<sub>0.5</sub>Cr<sub>0.5</sub>O<sub>3−δ</sub> Thin Films: Correlating Lattice Expansion with Oxidation State Variability

Oxygen vacancies (VO), even in the dilute regime, can significantly impact the physical and chemical properties of complex oxides. It is however challenging to reliably detect and adequately quantify such defects in thin film samples where the VO concentration and distribution may further vary in response to interfacial strain. Here, we present a method to quantify VO concentrations in SrFe0.5Cr0.5O3−δ (SFCO) epitaxial thin films. Through coherent Bragg rod analysis, X-ray absorption spectroscopy, and theoretical modeling, we systematically correlate the c-axis lattice expansion detected in SFCO films with a VO concentration gradient. Our results reveal a nearly linear relationship between oxygen off-stoichiometry and out-of-plane lattice expansion in coherently strained SFCO films, with δ increasing from 0.32 to 0.52 and the lattice expanding by ∼1.0%. Moreover, a significant decrease in Cr oxidation state (from Cr5+ to Cr3+) is observed as the VO concentration increases, while the Fe oxidation state remains fixed at Fe3+. Our findings provide a reliable way to quantify oxygen stoichiometry in complex oxides, offering a pathway to design materials with precisely tailored structure–property relationships.

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Publication Details

Journal
ACS Applied Electronic Materials
Published
2025-02-18
DOI
https://doi.org/10.1021/acsaelm.4c02149
Citations
1
Primary Topic
Electronic and Structural Properties of Oxides
Type
article
Field-Weighted Citation Impact
0.52

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article

Quantification of Oxygen Vacancies in SrFe0.5Cr0.5O3−δ Thin Films: Correlating Lattice Expansion with Oxidation State Variability

Zengqing Zhuo, Hua Zhou, Yingge Du, Mohammad Delower Hossain et al.
1 citations
ACS Applied Electronic Materials
Electronic and Structural Properties of Oxides
0.52
article

Quantification of Oxygen Vacancies in SrFe0.5Cr0.5O3−δ Thin Films: Correlating Lattice Expansion with Oxidation State Variability

Zengqing Zhuo, Hua Zhou, Yingge Du, Mohammad Delower Hossain, Krishna Prasad Koirala, Wanli Yang, Peter V. Sushko, Widitha S. Samarakoon, Mark Bowden, Scott A. Chambers, Zhenxing Feng, Le Wang
article en
1 citations

Abstract

Oxygen vacancies (VO), even in the dilute regime, can significantly impact the physical and chemical properties of complex oxides. It is however challenging to reliably detect and adequately quantify such defects in thin film samples where the VO concentration and distribution may further vary in response to interfacial strain. Here, we present a method to quantify VO concentrations in SrFe0.5Cr0.5O3−δ (SFCO) epitaxial thin films. Through coherent Bragg rod analysis, X-ray absorption spectroscopy, and theoretical modeling, we systematically correlate the c-axis lattice expansion detected in SFCO films with a VO concentration gradient. Our results reveal a nearly linear relationship between oxygen off-stoichiometry and out-of-plane lattice expansion in coherently strained SFCO films, with δ increasing from 0.32 to 0.52 and the lattice expanding by ∼1.0%. Moreover, a significant decrease in Cr oxidation state (from Cr5+ to Cr3+) is observed as the VO concentration increases, while the Fe oxidation state remains fixed at Fe3+. Our findings provide a reliable way to quantify oxygen stoichiometry in complex oxides, offering a pathway to design materials with precisely tailored structure–property relationships.

ACS Applied Electronic MaterialsVol. 7(5)
Argonne National Laboratory (US), Oregon State University (US), Pacific Northwest National Laboratory (US), Lawrence Berkeley National Laboratory (US), Advanced Light Source
National Science Foundation, Basic Energy Sciences, Pacific Northwest National Laboratory
Openalex Percentile: Top 42%
Electronic and Structural Properties of Oxides
0.52
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