Temperature Dependence of the Electronic Band Structure in Layered γ-InSe
Indium selenide (InSe), a layered semiconductor, has garnered significant attention for its exceptional properties, particularly in the field of optoelectronics. While temperature variations have been shown to influence the electronic band structure of InSe, the underlying mechanisms driving these changes remain insufficiently explained. In this study, we investigated the temperature-dependent electronic band structure of InSe using angle-resolved photoelectron spectroscopy (ARPES), quantitatively characterizing the valence band shifts. Further density functional theory (DFT) calculations reveal that lattice contributions to the band structure vary with temperature: positive contributions from lattices a and b contrast with a negative contribution from lattice c.
Authors
- Zhengtai Liu
- Yichen Yang (ORCID: https://orcid.org/0000-0002-3365-7178)
- Jinwei Dong (ORCID: https://orcid.org/0000-0001-5687-803X)
- Zhongwei Chen (ORCID: https://orcid.org/0000-0003-3463-5509)
- Runze Liu (ORCID: https://orcid.org/0009-0004-3116-8137)
- Yi Lian
- Fanxiang Meng
Institutions
- Dalian Institute of Chemical Physics (CN)
- Jilin University (CN)
- Chinese Academy of Sciences (CN)
- Institute of Catalysis and Petrochemistry (RU)
- Shanghai Advanced Research Institute (CN)
- Jilin Medical University (CN)
- State Key Laboratory of Catalysis
- Shanghai Synchrotron Radiation Facility
- Dalian Jiaotong University (CN)
Publication Details
- Journal
- ACS Applied Electronic Materials
- Published
- 2025-02-18
- DOI
- https://doi.org/10.1021/acsaelm.5c00078
- Citations
- 1
- Primary Topic
- Solid-state spectroscopy and crystallography
- Type
- article
- Field-Weighted Citation Impact
- 0.52
Funders
- National Natural Science Foundation of China
- Chinese Academy of Sciences
- Natural Science Foundation of Liaoning Province