Low-Power and High-Gain Organic Transistors Achieved Through an Ideal Contact Approaching the Schottky–Mott Limit

The advancement of flexible electronics necessitates low-power and high-gain organic transistors endowed with the capability to amplify feeble signals, meeting the demands of signal processing and transmission. Despite a myriad of endeavors, the intrinsic gain (<i>A</i>_i) of organic transistors at low supply voltage is conditioned by extrinsic losses attributable to imperfections at the electrical contact. Here, we push the metal-organic semiconductor contact close to the ideal Schottky-Mott model through a blade-coating-induced meniscus extension method, which allows the growth of organic single-crystalline films on multiple and uneven electrode heterointerfaces. Using this approach, our transistor manifests an impeccable gate electrostatic tunability with an ideal subthreshold swing (<i>SS</i>) of 59.6 mV dec^-1 and a low average <i>SS</i> of 84.2 mV dec^-1 over six decades of current, yielding a high <i>A</i>_i of 1.35 × 10⁵, which is comparable with the reported champion organic thin-film transistors. As a result, an amplifier based on the transistors can operate normally at an extremely low dynamic power consumption of 33.2 pW and reach an ultrahigh voltage gain of 1590 V/V at a low voltage of 5 V. Our study promises to usher in low-power organic electronics reaching the bounds of physical performance.