A 3.2–3.6 GHz GaN Doherty Power Amplifier Module Based on a Compact Low-Loss Combiner

In this paper, a 3.2-3.6 GHz two-stage Doherty power amplifier (PA) module is proposed for fifth-generation (5G) massive multiple-input multiple-output (MIMO) base stations. A detailed design method and procedure for a compact and low-loss combiner suitable for the Doherty PA module are introduced. Based on the proposed combiner, a Doherty PA module is implemented using gallium nitride (GaN) transistors and surface-mounted devices (SMDs) with a packaged size of 8 × 8 mm<sup>2</sup>. The proposed two-stage Doherty PA module achieves a 3 dB small-signal bandwidth of 3.1-3.9 GHz and a peak gain of 31.7 dB. From 3.2 to 3.6 GHz, the saturated output power is 40.4-41.1 dBm. Moreover, the measured saturated drain efficiency (DE) and 8 dB power back-off (PBO) DE reach 51-56.6% and 45.5-48.6%, respectively.

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Publication Details

Journal
Micromachines
Published
2025-02-15
DOI
https://doi.org/10.3390/mi16020220
Primary Topic
Advanced Power Amplifier Design
Type
article
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article

A 3.2–3.6 GHz GaN Doherty Power Amplifier Module Based on a Compact Low-Loss Combiner

Xiaolin Lv, Kai Cui, Kai Kang, Dehan Wang et al.
Micromachines
Advanced Power Amplifier Design
article

A 3.2–3.6 GHz GaN Doherty Power Amplifier Module Based on a Compact Low-Loss Combiner

Xiaolin Lv, Kai Cui, Kai Kang, Dehan Wang, Xiyu Wang, Haijun Liu, Wenming Li
article en

Abstract

In this paper, a 3.2-3.6 GHz two-stage Doherty power amplifier (PA) module is proposed for fifth-generation (5G) massive multiple-input multiple-output (MIMO) base stations. A detailed design method and procedure for a compact and low-loss combiner suitable for the Doherty PA module are introduced. Based on the proposed combiner, a Doherty PA module is implemented using gallium nitride (GaN) transistors and surface-mounted devices (SMDs) with a packaged size of 8 × 8 mm<sup>2</sup>. The proposed two-stage Doherty PA module achieves a 3 dB small-signal bandwidth of 3.1-3.9 GHz and a peak gain of 31.7 dB. From 3.2 to 3.6 GHz, the saturated output power is 40.4-41.1 dBm. Moreover, the measured saturated drain efficiency (DE) and 8 dB power back-off (PBO) DE reach 51-56.6% and 45.5-48.6%, respectively.

MicromachinesVol. 16(2)
University of Electronic Science and Technology of China (CN), China Mobile (China) (CN), ZTE (China) (CN), State Key Laboratory of Mobile Networks and Mobile Multimedia Technology
Openalex Percentile: Top 98%
Advanced Power Amplifier Design
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A 3.2–3.6 GHz GaN Doherty Power Amplifier Module Based on a Compact Low-Loss Combiner — Xiaolin Lv, Kai Cui, et al. · Micromachines (2025) | TGRS Research Map | TGRS